Samsung Electronics revealed a mock-up of its next-generation artificial intelligence (AI) memory, eighth-generation high bandwidth memory (HBM5), for the first time, signaling its intent to seize the next-generation HBM market.

Samsung Electronics unveils an HBM5 mock-up at Computex 2026 in Taipei, Taiwan, on the 2nd./Courtesy of Choi Hyo-jung

Song Jai-hyuk, chief technology officer (CTO) of Samsung Electronics, met with reporters on June 2 at Computex 2026 in Taipei, Taiwan, and said, "To respond to the rapidly changing AI industry, competitiveness in total solutions that encompass memory, foundry, logic, and packaging is crucial."

At this exhibition, Samsung Electronics unveiled the HBM5 mock-up for the first time and showcased the "HPB (Heat Path Block)" structure, a key thermal management technology to be applied to next-generation products.

HPB is a technology designed to effectively control heat generated during the operation of high-performance AI memory. It forms a separate heat transfer path between dies to lower thermal resistance and improve heat dissipation efficiency.

Song, the CTO, explained, "We added a heat transfer channel akin to a kind of chimney to control heat generation more effectively," and "it will play an important role in boosting HBM performance and system efficiency in next-generation high-bandwidth, high-density AI environments."

Samsung Electronics plans to apply a base die produced with its own 2-nanometer foundry process to HBM5. The strategy is to strengthen next-generation AI memory competitiveness by combining memory and system semiconductor capabilities.

The company has already completed implementation and verification of HPB technology on HBM4E-based products and plans full-scale application starting with HBM5.

Along with this, Samsung Electronics also displayed HBM4E wafers and chipsets, for which it began industry-first sample shipments on the past month.

HBM4E combines a cutting-edge 1c DRAM core die with a base die built on Samsung Electronics' 4-nanometer foundry process. It supports speeds of up to 16 Gbps per pin and can deliver more than 4 TB per second of data bandwidth.

In the industry, there is an assessment that Samsung Electronics is accelerating its push to secure leadership in the next-generation AI memory market by unveiling HBM5 following HBM4E.

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