Samsung Electronics has supplied samples of the next-generation high bandwidth memory (HBM) product "HBM4E," a core component of artificial intelligence (AI) chips, to global customers for the first time in the world.
After beginning mass production and shipment of HBM4, the sixth-generation HBM, in February, the company started supplying samples of the next-generation product in about three months, accelerating its push to secure leadership in the AI memory market.
Samsung Electronics said on the 29th that it shipped samples of "HBM4E 12-high," which delivers industry-leading performance.
The product combines 1c (10-nanometer-class sixth-generation) DRAM, validated with HBM4, and a 4-nanometer foundry process. The company said it significantly boosted performance through design and process optimization.
HBM4E supports a per-pin data rate from 14 Gbps (gigabits per second) up to 16 Gbps, more than a 20% improvement over the previous HBM4. It delivers 3.6 TB (terabytes) per second of bandwidth per stack, enhancing data processing performance for large language models (LLMs) and next-generation AI systems.
Capacity has also increased. The HBM4E 12-high product offers a high capacity of 48 GB (gigabytes), more than 30% higher than its predecessor, and the company plans to expand the lineup to 32 GB (8-high) and 64 GB (16-high) products.
Power efficiency and thermal performance have improved as well. Samsung Electronics said energy efficiency improved by 16% and thermal resistance characteristics by more than 14% compared with the previous generation through a low-power design and optimized packaging structure.
Samsung Electronics plans to begin full-scale mass production supply in line with customer schedules, starting with this sample shipment.
Hwang Sang-jun, vice president in charge of development at the Samsung Electronics Memory Business, said, "Following the successful mass production of HBM4, we have flawlessly completed the sample supply of next-generation HBM4E, once again proving our technology leadership," and added, "Based on preemptive investments in production infrastructure and an overwhelming technology gap, we will lead the growth of the global AI memory market."
Meanwhile, with rival SK hynix also reportedly moving up the launch timing of HBM4E, competition in the next-generation HBM market is expected to intensify. According to industry sources, SK hynix initially planned to ship samples in the second half of this year but is said to be reviewing a schedule adjustment as development progresses faster than expected.