SK hynix will strengthen its performance competitiveness by applying the 1c-nanometer process to its next-generation high bandwidth memory (HBM) 4E.
The company said at a conference call held on the 23rd after releasing first-quarter results, "HBM4E is under development based on close consultations with customers, and we are targeting sample supply in the second half and mass production in 2027," adding, "We plan to apply the 1c-nanometer process to the core die to reflect customer-required performance."
SK hynix also emphasized the maturity of this process. The company explained, "1c-nanometer entered mass production starting at the end of 2025 and has already proven performance in the market, and Production yield and mass production capability have reached a stable level." It added, "Through additional internalization of technology and customer validation, we will secure on-time development, stable mass production, and high quality to continue our technology leadership."