SK keyfoundry said on the 11th that it has completed development of a silicon carbide (SiC) planar MOSFET (a planar-structure power semiconductor device). Based on this, the company won a contract from a new customer to develop a 1,200-volt (V) SiC MOSFET product.
SK keyfoundry's SiC planar MOSFET process platform supports a wide voltage range from 450 volts to 2,300 volts. The company said, "We secured high reliability and stability data in high-voltage operating environments, proving outstanding performance," adding, "We raised productivity by increasing the Production yield (ratio of good products) to over 90% through optimization across the entire process and precise control of key steps." It added that it provides a differentiated "customer-tailored process response service" that can finely adjust electrical characteristics and specifications to meet customer requirements.
SK keyfoundry won an order for a 1,200-volt-class product from a SiC specialist design customer and has begun development. The process will be applied to the customer's industrial home appliances and is expected to play a key role in heat efficiency management. After prototype evaluation and reliability verification, the company plans to begin full-scale mass production in the first half of 2027.
SK keyfoundry said it developed the SiC planar MOSFET process platform by combining the core capabilities of both companies after acquiring SiC specialist SK Powertech. Chief Executive Lee Dong-jae of SK keyfoundry said, "This development of the SiC planar MOSFET process platform is a result that shows SK keyfoundry has secured independent technological leadership in the global compound semiconductor market," adding, "Based on a process with differentiated high Production yield and reliability, we will continue to expand high-voltage power semiconductor solutions that meet the needs of customers at home and abroad."