Samsung Electronics retook second place in the High Bandwidth Memory (HBM) market in the third quarter of this year, overtaking U.S. Micron in just three quarters.
According to market research firm Counterpoint Research on the 19th, Samsung Electronics' HBM market share by third-quarter revenue was 22%, ranking second after SK hynix, which recorded 57%. Micron was third with 21%, following Samsung Electronics.
Samsung Electronics ranked second with a 40% share in the fourth quarter of last year, following SK hynix (51%). However, in the first and second quarters of this year, its shares were 13% and 15%, respectively, ceding second place to Micron, which posted 18% and 21% over the same periods.
But its third-quarter share rose by 7 percentage points from the previous quarter. In contrast, Micron held at 21%, getting overtaken by Samsung Electronics. SK hynix still kept first place by a wide margin, but its share fell by 7 percentage points from the previous quarter (64%).
Counterpoint Research said, "Samsung Electronics, which struggled in the first half due to export restrictions to China, saw a slight increase in third-quarter market share thanks to strong results from HBM3E (5th generation)."
In the overall DRAM market in the third quarter, the shares were SK hynix (34%), Samsung Electronics (33%), and Micron (26%). The same ranking has continued for three consecutive quarters since the first quarter of this year, when SK hynix took first place.
Counterpoint Research noted, "The overall DRAM market grew 26% from the previous quarter on increased shipments and higher prices," and added, "As major suppliers reduced production of commodity DRAM, a supply shortage emerged."