Onsemi, an intelligent power and sensing corporations, said on the 4th that it signed a memorandum of understanding (MOU) with Innosience and will move to target the low- to mid-voltage (40–200V) gallium nitride (GaN) power device market.
Based on this MOU, the two companies plan to expand the supply of high-efficiency, high-performance GaN products. The idea is to create synergy by combining Onsemi's integrated system and packaging know-how with Innosience's GaN technology and mass production capabilities. Based on this, the main thrust of the MOU is to expand the business by supplying GaN products to the automotive, telecommunications infrastructure, consumer, and AI data center markets.
GaN semiconductor devices have ▲ fast switching speed ▲ small form factor ▲ low energy loss. The biggest advantage is cited as the ability to supply a lot of power in a small space. However, adoption has been limited in the low- and mid-voltage areas because manufacturing technology has not kept pace. Onsemi said, "By working with Innosience, we will solve existing market issues and quickly supply GaN solutions worldwide at scale."
GaN is expected to account for about 11% of the global Power Semiconductor market by 2030 and grow to $2.9 billion. The compound annual growth rate (CAGR) is forecast to be 42% from 2024 to 2030.
Antoine Jalaber, Onsemi's vice president of corporations strategy, said, "Through this collaboration, we will secure the industry's largest GaN production base and rapidly expand our GaN product portfolio for customers worldwide."
Lee Sun, Innosience's senior vice president of products and engineering institutional sector, said, "We will expand and accelerate the adoption of GaN power solutions worldwide and build a system integration platform leveraging Onsemi's extensive portfolio."