Micron is reported to be planning to build a high bandwidth memory (HBM) production line at its plant in Hiroshima Prefecture in western Honshu, Japan.
Nihon Keizai Shimbun (Nikkei) reported on the 30th that Micron plans to break ground on a new building in May next year and begin shipping next-generation HBM in 2028. The investment will total about 1.5 trillion yen (about 14 trillion won), with the Japanese government providing up to 500 billion yen (about 4.7 trillion won) in support.
Micron has been producing advanced HBM products in Taiwan. However, as geopolitical concerns around Taiwan have grown, including U.S.-China tensions and a potential Taiwan contingency, analysis suggests the company is seeking to increase investment in Japan.
Nikkei said, "The new manufacturing facility, the first since 2019 at the Hiroshima plant, is expected to become a world-class base for next-generation HBM production," and noted it "will chase SK hynix, which is ahead in technology."
The Japanese government plans to support more than 10 trillion yen (about 94 trillion won) in the semiconductor and AI sectors through the fiscal year 2030 (April 2030–March 2031) to build a cutting-edge semiconductor supply chain.