Samsung Electronics said during its earnings announcement conference call on the 31st, "We have completed the development of the 6th generation high bandwidth memory (HBM4) using the 6th generation 10-nanometer (1c) process and have already shipped samples to major clients," adding that "our HBM4 has applied the advanced logic process to the base die and has significantly improved performance and energy efficiency compared to the previous generation HBM3e."
It also added, "In preparation for increased demand for HBM4 next year, we will continue to expand investment in 1c facilities. Regarding the next-generation stacking technology, hybrid bonding, we have seen increased interest from clients and are currently in technical discussions with major customers considering mass production."