Kim Min-hyun, President of HANMI Semiconductor (left), and Lee Jae-ho, President of TES, are signing the hybrid bonder agreement./Courtesy of HANMI Semiconductor

On the 23rd, HANMI Semiconductor announced that it signed an agreement with TES to develop 'hybrid bonder' equipment at its headquarters in Incheon.

The agreement involves HANMI Semiconductor as the leader and TES as a participating partner. Hybrid bonding is a next-generation packaging technology that maximizes input/output (I/O) performance and supports over 20 layers through copper-copper (Cu-Cu) direct consolidation, differing from the existing bump method.

This technology requires process technology to directly bond different chips at the semiconductor wafer stage. HANMI Semiconductor plans to combine TES's plasma, thin film deposition, and cleaning technologies with bonding technology for high-bandwidth memory (HBM).

It is anticipated that global HBM manufacturing corporations will adopt hybrid bonding technology for next-generation high-layer HBM production, leading to expected growth in the relevant equipment market.

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