HANMI Semiconductor launches the 6th generation High Bandwidth Memory (HBM4) 'TC Bonder 4' along with Chairman Kwak Dong-shin. /Courtesy of HANMI Semiconductor

HANMI Semiconductor announced on the 14th that it will release the 6th generation high-bandwidth memory (HBM4) dedicated equipment 'TC Bonder 4 (TC BONDER 4)'.

Kwak Dong-shin, chairman of HANMI Semiconductor, noted, 'NVIDIA will produce its next-generation product, Blackwell Ultra, using HANMI Semiconductor's TC Bonder this second half of the year. Thus, our HBM TC Bonder's global market share ranking and competitiveness remain unchanged.'

HANMI Semiconductor explained that the newly launched 'TC Bonder 4' is dedicated equipment capable of producing HBM4, featuring significantly improved productivity and precision compared to competitors, tailored to the high precision demanded by HBM4 characteristics.

Global corporations are preparing for mass production of HBM4 in the second half of this year. The 6th generation high-bandwidth memory, HBM4, boasts a 60% increase in speed compared to the existing 5th generation (HBM3E), while power consumption has been reduced to around 70%.

HBM4 supports up to 16 layers, with the capacity per DRAM expanded from 24Gb to 32Gb. The number of silicon via (TSV) interfaces, which serve as data transmission pathways, has increased to 2,048, twice that of the previous generation, significantly enhancing the data transfer speed between processors and memory.

Accordingly, the importance of advanced bonding technology is growing in the 16-layer or more HBM stacking process, which requires high precision.

Founded in 1980, HANMI Semiconductor is a global semiconductor equipment corporation with around 320 customers worldwide. Since the establishment of the Intellectual Property Department in 2002, the company has focused on protecting and strengthening intellectual property rights, applying for a total of over 120 HBM equipment patents to date.

Currently, HANMI Semiconductor holds over 90% of the market share for TC Bonder used in producing 12-layer HBM3E.

※ This article has been translated by AI. Share your feedback here.