Bloomberg reported on the 31st (local time) that Samsung Electronics received approval from Nvidia for fifth-generation high bandwidth memory (HBM).
Bloomberg cited sources stating that Samsung Electronics’ HBM3E eight-layer product tailored for the Chinese market received Nvidia's approval last December. Bloomberg noted, “Samsung is supplying chips for a specialized version of Nvidia’s artificial intelligence (AI) process customized for the Chinese market,” adding that “although the scale is small, this marks progress after a year of efforts by Samsung Electronics to obtain approval for the HBM3E chips from Nvidia.”
However, Bloomberg reported that Samsung Electronics and Nvidia declined to comment on this matter.
Earlier, SK hynix obtained Nvidia's HBM3E eight-layer certification last March. U.S. company Micron was also reported to have received HBM3E eight-layer certification in the second half of last year.
HBM is a type of high bandwidth memory that vertically stacks DRAM chips using Through-Silicon Via (TSV) technology for consolidation. It is significantly faster than existing DDR or GDDR in data transfer speeds, and its power efficiency makes it an essential memory type in areas like AI, high-performance computing (HPC), and data centers.